Part Number Hot Search : 
COMPO MN35503 B380S15A PC4N28V PC4N28V PC4N28V MT2601 MN35503
Product Description
Full Text Search

2SK1010 - Drain Current ?ID=6A@ TC=25C

2SK1010_8602420.PDF Datasheet

 
Part No. 2SK1010
Description Drain Current ?ID=6A@ TC=25C

File Size 61.17K  /  2 Page  

Maker

Inchange Semiconductor ...



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 2SK1013-01
Maker: FUJU
Pack:
Stock: Reserved
Unit price for :
    50: $0.92
  100: $0.88
1000: $0.83

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ 2SK1010 Datasheet PDF Downlaod from Datasheet.HK ]
[2SK1010 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for 2SK1010 ]

[ Price & Availability of 2SK1010 by FindChips.com ]

 Full text search : Drain Current ?ID=6A@ TC=25C


 Related Part Number
PART Description Maker
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 From old datasheet system
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
General Electric Solid State
GE Solid State
AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AM MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
1.2V SHUNT REGULATOR
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
2SK635 Drain Current ?ID=3A@ TC=25C
Inchange Semiconductor ...
2N20 Drain Current ID= 2A@ TC=25C
Inchange Semiconductor ...
2SK630 Drain Current ?ID=5A@ TC=25C
Inchange Semiconductor ...
2SK934 Drain Current ?ID=8A@ TC=25C
Inchange Semiconductor ...
1N65 Drain Current ID= 1.2A@ TC=25C
Inchange Semiconductor ...
2SK752 Drain Current ?ID= 3A@ TC=25C
Inchange Semiconductor ...
2SK755 Drain Current ?ID=5A@ TC=25C
Inchange Semiconductor ...
 
 Related keyword From Full Text Search System
2SK1010 enhancement 2SK1010 planar 2SK1010 video monitor 2SK1010 Temperature 2SK1010 Interrupt
2SK1010 vdd 2SK1010 Power 2SK1010 Collector 2SK1010 Positive 2SK1010 data
 

 

Price & Availability of 2SK1010

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.14489388465881